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Numéro de référence | TDM2306 | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | Techcode | ||
Logo | |||
N-Channel Enhancement Mode Power MOSFET
Datasheet
TDM2306
DESCRIPTION
The TDM2306 uses advanced trench technology to provide
excellent R , low gate charge and operation with gate
DS(ON)
voltages as low as 2.5V.
GENERAL FEATURES
● VDS = 30V,ID = 5A
RDS(ON) < 50mΩ @ VGS=2.5V
RDS(ON) < 35mΩ @ VGS=4.5V
RDS(ON) < 30mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●PWM applications
●Load switch
●Power management
Schematic diagram
Marking and pin Assignment
SOT-23 top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=30V,VGS=0V
Limit
30
±20
5
20
1.38
-55 To 150
Unit
V
V
A
A
W
℃
90 ℃/W
Min Typ Max Unit
30 V
1 μA
October, 20, 2010. Techcode Semiconductor Limited www.techcodesemi.com
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Pages | Pages 4 | ||
Télécharger | [ TDM2306 ] |
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