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Techcode - N-Channel Enhancement Mode MOSFET

Numéro de référence TDM2306
Description N-Channel Enhancement Mode MOSFET
Fabricant Techcode 
Logo Techcode 





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TDM2306 fiche technique
 
 
N-Channel Enhancement Mode Power MOSFET
 
Datasheet
TDM2306
DESCRIPTION
 The TDM2306 uses advanced trench technology to provide 
excellent R , low gate charge and operation with gate 
DS(ON) 
voltages as low as 2.5V. 
GENERAL FEATURES
VDS = 30V,ID = 5A
RDS(ON) < 50m@ VGS=2.5V
RDS(ON) < 35m@ VGS=4.5V
RDS(ON) < 30m@ VGS=10V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
PWM applications
Load switch
Power management
Schematic diagram
Marking and pin Assignment
SOT-23 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=30V,VGS=0V
Limit
30
±20
5
20
1.38
-55 To 150
Unit
V
V
A
A
W
90 /W
Min Typ Max Unit
30 V
1 μA
October, 20, 2010.                                                           Techcode Semiconductor Limited                                       www.techcodesemi.com 
1 

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