FGH40T65UPD Datasheet PDF - Fairchild Semiconductor
| Part Number | FGH40T65UPD | |
| Description | IGBT ( Insulated Gate Bipolar Transistor ) | |
| Manufacturers | Fairchild Semiconductor | |
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There is a preview and FGH40T65UPD download ( pdf file ) link at the bottom of this page. Total 10 Pages | ||
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April 2013
FGH40T65UPD
650 V, 40 A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 40 A
• 100% of Parts Tested ILM(2)
• High Input Impedance
• Tightened Parameter Distribution
• RoHS Compliant
• Short-circuit Ruggedness > 5us @25oC
General Description
Using innovative field stop trench IGBT technology, Fairchild®’s
new series of field stop trench IGBTs offer optimum perfor-
mance for solar inverter, UPS, welder, and digital power genera-
tor where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Welder, Digital Power Generator
• Telecom, ESS
E
C
G
C
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
ILM (2)
IF
IFM(1)
PD
SCWT
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
Clamped Inductive Load Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Short Circuit Withstand Time
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
2: Ic = 120A, Vce = 400V, Rg = 15Ω
Thermal Characteristics
Symbol
Parameter
RθJC(IGBT)
Thermal Resistance, Junction to Case
RθJC(Diode) Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
©2012 Fairchild Semiconductor Corporation
FGH40T65UPD Rev. C0
1
G
E
Ratings
650
± 20
80
40
120
120
40
20
120
268
134
5
-55 to +175
-55 to +175
300
Unit
V
V
A
A
A
A
A
A
A
W
W
us
oC
oC
oC
Typ.
-
-
-
Max.
0.56
1.71
40
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
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Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
40A
4
IC = 20A
80A
0
4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 9. Capacitance Characteristics
10000
1000
Cies
100 Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Coes
Cres
30
1 10
Collector-Emitter Voltage, VCE [V]
30
Figure 11. SOA Characteristics
1000
100
10μs
100μs
10
10 ms
1ms
DC
1
*Notes:
0.1 1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.01
0.1
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 175oC
16
12
8
40A
4
IC = 20A
80A
0
4 8 12 16
Gate-Emitter Voltage, VGE [V]
20
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
200V
300V
9 VCC = 400V
6
3
0
0 30 60 90 120 150 180
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
tr
10
5
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
©2012 Fairchild Semiconductor Corporation
FGH40T65UPD Rev. C0
5
www.fairchildsemi.com
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