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PDF FGH40T70SHD Data sheet ( Hoja de datos )
| Número de pieza | FGH40T70SHD | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGH40T70SHD
700 V, 40 A Field Stop Trench IGBT
March 2016
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.7 V(Typ.) @ IC = 40 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
EC
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
IF
IFM (2)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to EmitterVoltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
@ TC = 25oC
@ TC = 100oC
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
@ TC = 25oC
@ TC = 100oC
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC =120 A, RG = 30 Ω, Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
©2016 Fairchild Semiconductor Corporation
FGH40T70SHD Rev. 1.0
1
C
G
E
FGH40T70SHD_F155
700
± 20
± 30
80
40
120
120
40
20
120
268
134
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
A
W
W
oC
oC
oC
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
10000
1000
Cies
Coes
100
Common Emitter
VGE = 0V, f = 1MHz
Cres
TC = 25oC
10
1 10
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
100
tr
30
td(on)
10
5
0
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 11. Switching Loss vs.
Gate Resistance
5000
1000
100
0
Eon
Eoff Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 8. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 200V
400V
9 300V
6
3
0
0 20 40 60 80
Gate Charge, Qg [nC]
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
100
td(off)
10
1
0
tf
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 12. Turn-on Characteristics vs.
Collector Current
100
tr
10
5
20
td(on)
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
40 60
Collector Current, IC [A]
80
©2016 Fairchild Semiconductor Corporation
FGH40T65SHD Rev. 1.0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGH40T70SHD.PDF ] | |
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