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PDF FGD5T120SH Data sheet ( Hoja de datos )
| Número de pieza | FGD5T120SH | |
| Descripción | IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGD5T120SH
1200 V, 5 A FS Trench IGBT
Features
• FS Trench Technology, Positive Temperature Coefficient
• High Speed Switching
• Low Saturation Voltage: VCE(sat) =2.9 V @ IC = 5 A
• 100% of the Parts tested for ILM(1)
• High Input Impedance
• RoHS Compliant
Applications
• Inrush current limitation
• Lighting
• Home appliances
November 2015
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for inrush current limitation, lighting and home appliance
applications.
G
E
C
D-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Clamped Inductive Load Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. Vcc = 600 V,VGE = 15 V, IC = 12.5 A, RG = 50
2. Limited by Tjmax
Inductive Load
FGD5T120SH
1200
±25
±30
10
5
12.5
12.5
69
28
-55 to +150
-55 to +150
300
Unit
V
V
V
A
A
A
A
W
W
oC
oC
oC
©2015 Fairchild Semiconductor Corporation
FGD5T120SH Rev. 1.0
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 13. Turn-off Characteristics VS.
Gate Resistance
1000
Common Emitter
VCC = 600V, VGE = 15V
IC = 5A
TC = 25oC
TC = 150oC
tf
100
td(off)
1030
60 90 120
Gate Resistance, RG [Ω]
150
Figure 15.Turn-off Characteristics VS.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 30Ω
TC = 25oC
TC = 150oC
tf
100
td(off)
10
2468
Collector Current, IC [A]
Figure 17. Switching Loss VS.
Collector Current
1000
Eon
10
100
10 2
Eoff
Common Emitter
VGE = 15V, RG = 30Ω
TC = 25oC
TC = 150oC
468
Collector Current, IC [A]
10
Figure 14.Turn-on Characteristics VS.
Collector Current
100
Common Emitter
VGE = 15V, RG = 30Ω
TC = 25oC
TC = 150oC
tr
10
td(on)
1
2468
Collector Current, IC [A]
Figure 16.Switching Loss VS.
Gate Resistance
1000
Eon
10
100
Eoff
Common Emitter
VCC = 600V, VGE = 15V
IC = 5A
TC = 25oC
TC = 150oC
10
30
60 90 120
Gate Resistance, RG [Ω]
150
Figure 18. Current Derating
10
8
6
4
2
0
25
50
Case
75 100
temperature, TC
[oC]125
150
©2015 Fairchild Semiconductor Corporation
FGD5T120SH Rev. 1.0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGD5T120SH.PDF ] | |
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