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Numéro de référence | KTC3202 | ||
Description | NPN Transistor | ||
Fabricant | WEJ | ||
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1 Page
RoHS
KTC3202
KTC3202 TRANSISTOR (NPN)
DFEATURES
TPower dissipation
.,LPCM:
0.625 W (Tamb=25℃)
Collector current
ICM: 0.5
OCollector-base voltage
A
V(BR)CBO:
35 V
COperating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-BASE breakdown voltage
OCollector-emitter breakdown voltage
REmitter-base breakdown voltage
TCollector cut-off current
CEmitter cut-off current
EDC current gain
LCollector-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE 1
hFE 2
VCE(sat)
Test conditions
Ic= 0.1mA, IB=0
Ic= 1 mA, IB=0
IE= 0.1 mA, IC=0
VCB= 35V, IE=0
VEB= 5V, IC=0
VCE= 1V, IC= 100mA
VCE= 6V, IC= 400mA
IC=100 mA, IB= 10mA
MIN
35
30
5
70
25
TYP
0.1
EBase-Emitter Saturation Voltage
VBE VCE=1V, IC= 100mA
0.8
JTransition frequency
ECollector Output Capacitance
fT VCE= 6V, IC= 20mA
Cob VCB= 6V, IE= 0,f=1 MHz
200
7.0
MAX UNIT
V
V
V
0.1 µA
0.1 µA
240
0.25 V
1.0 V
MHz
pF
WCLASSIFICATION OF hFE(1)
Rank
OY
Range
70-140
120-240
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Pages | Pages 1 | ||
Télécharger | [ KTC3202 ] |
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