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PDF DK64N90 Data sheet ( Hoja de datos )
| Número de pieza | DK64N90 | |
| Descripción | N-Channel Trench Process Power MOSFET | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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DK64N90
®
Pb Free Plating Product
DK64N90
Pb
N-Channel Trench Process Power MOSFET Transistors
General Description
DK64N90 series is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged
EAS capability and ultra low RDS(ON) is suitable for PWM,
load switching especially for E-Bike controller applications.
Features
● VDS=85V; ID=92A@ VGS=10V;
RDS(ON)<7.45mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
Application
● 64V E-Bike Controller Applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
● Inverter Application
● Amplifier Application
DK64N90
(TO-220 HeatSink)
G DS
DK64N90F
(TO-220F FullPak)
Schematic Diagram
DS
G
VDS = 85 V
DK64N90S
(TO-263/D2PAK)
ID = 92A
D
S
G
RDS(ON) = 6.2 mΩ
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD
EAS
TJ,TSTG
Maximum Power Dissipation(Tc=25℃)
Derating Factor
Single Pulse Avalanche Energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=40V,VBGB=10V,RG=25Ω
Value
85
±25
92
64.4
368
30
139
0.93
625
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/5
http://www.thinkisemi.com/
1 page  
DK64N90
Figure7. Capacitance vs Vds
®
Figure8. Safe Operation Area
VDS Drain-Source Voltage (V)
Figure9. BVDSS vs Junction Temperature
VDS Drain-Source Voltage (V)
Figure10. VGS(th) vs Junction Temperature
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure11. Normalized Maximum Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 5/5
http://www.thinkisemi.com/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DK64N90.PDF ] | |
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