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10F30HF3 fiches techniques PDF

Thinki Semiconductor - 10.0 Ampere Insulated Common Anode Super Fast Recovery Rectifiers

Numéro de référence 10F30HF3
Description 10.0 Ampere Insulated Common Anode Super Fast Recovery Rectifiers
Fabricant Thinki Semiconductor 
Logo Thinki Semiconductor 





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10F30HF3 fiche technique
10F20HF3S thru 10F40HF3S
®
10F20HF3S thru 10F40HF3S
Pb Free Plating Product
Pb
10.0 Ampere Insulated Common Anode Super Fast Recovery Rectifiers
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
TO-220HF-3L
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
Mechanical Data
¬ Case:Fully plastic isolation TO-220HF-3L
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:As marked on diode body
¬ Mounting position: Any
¬ Weight: 2.0 gram approximately
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Positive
Negative
Common Cathode Common Anode
Suffix "S"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL 10F20HF3
10F20HF3S
VRRM
200
VRMS
140
10F30HF3 10F40HF3 UNIT
10F30HF3S 10F40HF3S
300 400 V
210 280 V
Maximum DC Blocking Voltage
VDC 200
300 400 V
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
10.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
100 A
Maximum Instantaneous Forward Voltage
@ 5.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
VF
IR
Trr
CJ
R JC
TJ, TSTG
0.98
1.3
10.0
250
35
65
2.2
-55 to +150
1.3 V
uA
uA
nS
pF
oCW
oC
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.05/2015
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/

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