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Numéro de référence | B5819W | ||
Description | SCHOTTKY BARRIER DIODE | ||
Fabricant | TRANSYS | ||
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1 Page
B5819W SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
PD: 450 mW (Tamb=25℃)
Collector current
IF: 1 A
Collector-base voltage
VR: 40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOD-123
Unit: mm
2. 70
3. 70
MARKING: SL
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
V(BR)
IR
VF
CD
Test conditions
IR= 1mA
VR=40V
VR=4V
VR=6V
IF=0.1A
IF=1A
IF=3A
VR=4V, f=1MHz
MIN
MAX
UNIT
40 V
1
0.05
0.075
0.45
0.6
0.9
mA
V
120 pF
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Pages | Pages 1 | ||
Télécharger | [ B5819W ] |
No | Description détaillée | Fabricant |
B5819W | SCHOTTKY BARRIER DIODE | JCET |
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