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TRANSYS - SCHOTTKY BARRIER DIODE

Numéro de référence B5819W
Description SCHOTTKY BARRIER DIODE
Fabricant TRANSYS 
Logo TRANSYS 





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B5819W fiche technique
B5819W SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
PD: 450 mW (Tamb=25)
Collector current
IF: 1 A
Collector-base voltage
VR: 40 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
SOD-123
Unit: mm
2. 70
3. 70
MARKING: SL
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
V(BR)
IR
VF
CD
Test conditions
IR= 1mA
VR=40V
VR=4V
VR=6V
IF=0.1A
IF=1A
IF=3A
VR=4V, f=1MHz
MIN
MAX
UNIT
40 V
1
0.05
0.075
0.45
0.6
0.9
mA
V
120 pF

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