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PDF NCE2025S Data sheet ( Hoja de datos )
| Número de pieza | NCE2025S | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
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http://www.ncepower.com
Pb Free Product
NCE2025S
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2025S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
●VDS =20V,ID =25A
RDS(ON) < 4mΩ @ VGS=4.5V
RDS(ON) < 6mΩ @ VGS=2.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Schematic diagram
Application
● DC/DC Converter
● Battery protection
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE2025S
NCE2025S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TA=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
20
±12
25
17.7
140
2.5
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
50 ℃/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
http://www.ncepower.com
Pb Free Product
NCE2025S
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 BVDSS vs Junction Temperature
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 Current vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE2025S.PDF ] | |
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