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RJK0323JPD fiches techniques PDF

Renesas - Silicon N-Channel MOS FET

Numéro de référence RJK0323JPD
Description Silicon N-Channel MOS FET
Fabricant Renesas 
Logo Renesas 





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RJK0323JPD fiche technique
RJK0323JPD
Silicon N Channel MOS FET
High Speed Power Switching
Features
For Automotive application
AEC-Q101 compliant
Low on-resistance : RDS(on) = 7.0 mΩ typ.
Low drive current
Capable of 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
4
123
1G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 μs, duty cycle 1%
2. Tch = 25°C, Rg 50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
I Note2
AP
E Note2
AR
Pch Note3
Tch Note4
Tstg
Thermal Impedance Characteristics
Channel to case thermal impedance θch-c: 3.125°C/W
Preliminary Datasheet
R07DS0334EJ0100
Rev.1.00
Apr 18, 2011
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Value
30
±20
30
120
30
30
90
40
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS0334EJ0100 Rev.1.00
Apr 18, 2011
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