|
|
PDF NP55N04SLG Data sheet ( Hoja de datos )
| Número de pieza | NP55N04SLG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NP55N04SLG (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
NP55N04SLG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0242EJ0100
Rev.1.00
Feb 23, 2011
Description
The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Channel temperature 175 degree rating
• Super low on-state resistance
⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A)
⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A)
⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A)
• Low input capacitance
• Gate to Source ESD protection diode built-in
Ordering Information
Part No.
LEAD PLATING
PACKING
NP55N04SLG-E1-AY ∗1
NP55N04SLG-E2-AY ∗1
Pure Sn (Tin)
Tape 2500 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)
Package
TO-252 (MP-3ZK)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current ∗2
Repetitive Avalanche Energy ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±55
±220
77
1.2
175
−55 to +175
30
90
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
1.95 °C/W
125 °C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Starting Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
R07DS0242EJ0100 Rev.1.00
Feb 23, 2011
Page 1 of 6
1 page  
NP55N04SLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-75
VGS = 4.5 V
-25
5.0 V
25
75
10 V
ID = 28 A
Pulsed
125 175
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 20 V
tr
VGS = 10 V
RG = 0 Ω
td(off)
td(on)
tf
1
0.01
0.1 1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
100
VGS = 10 V
10 4.5 V
5.0 V
1
0V
0.1
0.01
0.001
0.0001
0
0.2 0.4 0.6 0.8
Pulsed
1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
R07DS0242EJ0100 Rev.1.00
Feb 23, 2011
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10.00
Ciss
1.00
Coss
0.10
VGS = 0 V
f = 1 MHz
Crss
0.01 0.1 1 10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
VDS
30
25
20
15
10
5
0
0 10
15
VDD = 32 V
20 V
8V
10
5
ID = 55 A
Pulsed
0
20 30 40 50 60 70
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
VGS = 0 V
di/dt = 100 A/μs
1 10 100
IF - Diode Forward Current - A
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP55N04SLG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NP55N04SLG | MOS FIELD EFFECT TRANSISTOR | Renesas |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |