|
|
Numéro de référence | NP100N04NUJ | ||
Description | MOS FIELD EFFECT TRANSISTOR | ||
Fabricant | Renesas | ||
Logo | |||
1 Page
NP100N04NUJ
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0364EJ0100
Rev.1.00
Jun 13, 2011
Description
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current rating: ID(DC) = ±100 A
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP100N04NUJ–S18-AY ∗1
Lead Plating
Pure Sn (Tin)
Packing
Tube 50 p/tube
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-262 (MP-25SK) TYP. 1.8g
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current ∗2
Repetitive Avalanche Energy ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±100
±400
220
1.8
175
−55 to +175
60
360
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Tch(peak) ≤ 150°C, RG = 25 Ω
0.68
83.3
°C/W
°C/W
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 1 of 6
|
|||
Pages | Pages 8 | ||
Télécharger | [ NP100N04NUJ ] |
No | Description détaillée | Fabricant |
NP100N04NUJ | MOS FIELD EFFECT TRANSISTOR | Renesas |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |