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PDF BCR4AS-16LH Data sheet ( Hoja de datos )
| Número de pieza | BCR4AS-16LH | |
| Descripción | Triac | |
| Fabricantes | Renesas | |
| Logotipo |  |
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BCR4AS-16LH
Triac
Medium Power Use
Features
• IT (RMS) : 4 A
• VDRM : 800 V
• IFGTI, IRGTI, IRGT III : 35 mA or 10mA(IGT item:1)
• High Commutation
Preliminary Datasheet
R07DS0331EJ0100
Rev.1.00
Apr 28, 2011
• The Product guaranteed maximum junction
temperature 150°C
• Non-Insulated Type
• Planar Type
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
12 3
2, 4
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Switching mode power supply, small motor control, heater control, and other general purpose AC power control
applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Notes: 1. Gate open.
Symbol
VDRM
VDSM
Voltage class
16
800
960
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Ratings
4
30
3.7
3
0.3
10
2
–40 to +150
–40 to +150
0.32
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 129°C Note3
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
R07DS0331EJ0100 Rev.1.00
Apr 28, 2011
Page 1 of 6
1 page  
BCR4AS-16LH
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140 Tj = 125°C
120
100
80 III Quadrant
60
40
I Quadrant
20
0
101 102 103 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
102
Main Voltage
(dv/dt)c
Main Current
IT
τ
Time
VD
(di/dt)c
Time
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101
Minimum
Value
(IGTitem1)
Minimum
Value
III Quadrant
I Quadrant
100
100 101 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
6V A
V 330Ω
Test Procedure I
6Ω
6V A
V 330Ω
Test Procedure II
6V A
V 330Ω
Test Procedure III
Preliminary
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140 Tj = 150°C
120
100
80
III Quadrant
60
40 I Quadrant
20
0
101 102 103 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
102
Main Voltage
(dv/dt)c
Main Current
IT
τ
Time Typical Example
VD Tj = 150°C
(di/dt)c IT = 4A
τ = 500μs
Time VD = 200V
f = 3Hz
101
I Quadrant
III Quadrant
100
100 101 102
Rate of Decay of On-State
Commutating Current (A/ms)
Recommended Circuit Values Around The Triac
Load
C1
R1 C0 R0
C1 = 0.1 to 0.47μF C0 = 0.1μF
R1 = 47 to 100Ω R0 = 100Ω
R07DS0331EJ0100 Rev.1.00
Apr 28, 2011
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BCR4AS-16LH.PDF ] | |
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