DataSheetWiki


MBR15150CT fiches techniques PDF

LGE - Schottky Barrier Rectifiers

Numéro de référence MBR15150CT
Description Schottky Barrier Rectifiers
Fabricant LGE 
Logo LGE 





1 Page

No Preview Available !





MBR15150CT fiche technique
MBR1535CT-MBR15150CT
15.0AMP. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220AB molded plastic body
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
MBR
1535CT
MBR
1545CT
MBR
1550CT
MBR
1560CT
MBR
1590CT
MBR
15100CT
MBR
15150CT
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=105OC
VRRM 35 45 50 60 90 100 150 V
VRMS 24 31 35 42 63 70 105 V
VDC 35 45 50 60 90 100 150 V
I(AV) 15 A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=105oC
IFRM
15 A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
IFSM
150 A
Peak Repetitive Reverse Surge Current (Note 1) IRRM
1.0
0.5 A
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=7.5A, TC=25oC
IF=7.5A, TC=125oC
IF=15A, TC=25oC
IF=15A, TC=125oC
VF
0.57
0.84
0.72
0.75
0.65
0.92 1.05
0.82 0.92 V
--
--
Maximum Instantaneous Reverse Current
@ Tc =25 oC at Rated DC Blocking Voltage
@ Tc=125 oC (Note 2)
IR
0.5
10
0.3
7.5
0.1 mA
5.0 mA
Voltage Rate of Change (Rated VR)
Typical Junction Capacitance
dV/dt
Cj
1,000
400
200
V/uS
pF
Maximum Typical Thermal Resistance (Note 3)
RθJA
RθJC
Operating Junction Temperature Range
TJ
Storage Temperature Range
TSTG
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mount on Heatsink Size of 2 “ x 3 “ x 0.25” Al-Plate.
10
1.5
-65 to +150
-65 to +175
oC/W
oC
oC
http://www.luguang.cn
- 120 -

PagesPages 2
Télécharger [ MBR15150CT ]


Fiche technique recommandé

No Description détaillée Fabricant
MBR15150CT Dual Common Cathode Schottky Rectifier Taiwan Semiconductor
Taiwan Semiconductor
MBR15150CT Schottky Barrier Rectifiers LGE
LGE
MBR15150CT-Y Dual Common Cathode Schottky Rectifier Taiwan Semiconductor
Taiwan Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche