DataSheetWiki


MBRB10H100CT fiches techniques PDF

Vishay - Dual Common Cathode High Voltage Schottky Rectifier

Numéro de référence MBRB10H100CT
Description Dual Common Cathode High Voltage Schottky Rectifier
Fabricant Vishay 
Logo Vishay 





1 Page

No Preview Available !





MBRB10H100CT fiche technique
www.vishay.com
MBR(F,B)10H90CT, MBR(F,B)10H100CT
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
MBR10H90CT
MBR10H100CT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
MBRF10H90CT
MBRF10H100CT
PIN 1
PIN 2
PIN 3
2
1
MBRB10H90CT
MBRB10H100CT
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
IR
TJ max.
5Ax2
90 V, 100 V
150 A
0.61 V
3.5 μA
175 °C
FEATURES
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, and
polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94-V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TC = 105 °C
total device
per diode
VRRM
VRWM
VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Peak repetitive reverse current per diode at tp = 2.0 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
IRRM
dV/dt
TJ, TSTG
VAC
MBR10H90CT
MBR10H100CT
90 100
90 100
90 100
10
5.0
150
0.5
10 000
- 65 to 175
1500
UNIT
V
A
V/μs
°C
V
Revision: 27-Jun-12
1 Document Number: 88668
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PagesPages 5
Télécharger [ MBRB10H100CT ]


Fiche technique recommandé

No Description détaillée Fabricant
MBRB10H100CT SWITCHMODE Power Rectifier Vaishali Semiconductor
Vaishali Semiconductor
MBRB10H100CT Dual Common Cathode High Voltage Schottky Rectifier Vishay
Vishay

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche