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CDBFR0130-HF fiches techniques PDF

Comchip - SMD Schottky Barrier Diode

Numéro de référence CDBFR0130-HF
Description SMD Schottky Barrier Diode
Fabricant Comchip 
Logo Comchip 





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CDBFR0130-HF fiche technique
SMD Schottky Barrier Diode
CDBFR0130-HF
Io = 100 mA
VR = 30 Volts
RoHS Device
Halogen Free
Features
- Designed for mounting on small surface.
- Extremely thin package.
- Low stored charge.
- Majority carrier conduction.
Mechanical data
- Case: 1005/SOD-323F standard package,
molded plastic.
- Terminals: Gold plated, solderable per
MIL-STD-750,method 2026
- Polarity: Indicated by cathode band.
- Mounting position: Any
- Weight: 0.006 grams(approx.).
Circuit Diagram
1005/SOD-323F
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.024(0.60)
0.016(0.40)
0.035(0.90)
0.027(0.70)
0.041(1.05)
0.037(0.95)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Repetitive peak reverse voltage
VRRM
35 V
Reverse voltage
VR 30 V
Average forward current
IO 100 mA
Forward current, surge peak
Power dissipation
Junction temperature
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
PD
Tj
1A
250
+125
mW
OC
Storage temperature
TSTG
-40
+125 OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
IF = 100 mA DC
VF 0.44 V
Reverse current
VR = 30V
IR 30 uA
Capacitance between terminals F = 1 MHZ and 10 VDC reverse voltage
CT
9 pF
QW-G1039
Company reserves the right to improve product design , functions and reliability without notice.
Comchip Technology CO., LTD.
REV:B
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