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RB751VM-40FH fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB751VM-40FH
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB751VM-40FH fiche technique
Schottky Barrier Diode
RB751VM-40FH
Application
High speed switching
Dimensions (Unit : mm)
1.25±0.1
0.1±0.1
    0.05
Datasheet
AEC-Q101 Qualified
Land size figure (Unit : mm)
0.9M IN .
Features
1) Ultra small mold type.
(UMD2)
2) Low IR
3) High reliability
Construction
Silicon epitaxial planar
UMD2
Structure
0.3±0.05
0.7±0.2
    0.1
ROHM : UMD2 JEITA : SC-90/A
JEDEC :SOD-323
dot (year week factory)
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ11.5.555±0.00.505
Cathode
Anode
0.3±0.1
1.40±0.1
4.0±0.1
φ11..05
Absolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current
VRM
VR
Io
Forward current surge peak (60Hz1cyc)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
Limits
40
30
30
200
150
40 to 150
Unit
V
V
mA
mA
°C
°C
1.0±0.1
Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF - - 0.37
Reverse current
IR - - 0.5
Capacitance between terminals
Ct - 2 -
Unit Conditions
V IF=1mA
A VR=30V
pF VR=1V , f=1MHz
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.04 - Rev.D

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