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RB160VA-40FH fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB160VA-40FH
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB160VA-40FH fiche technique
Schottky Barrier Diodes
RB160VA-40FH
Applications
General rectification
Dimensions (Unit : mm)
1.3±0.05
0.1 7±0.1
   0.05
Features
1) Small mold type. (TUMD2)
2) Low VF, Low IR.
3) High reliability.
Construction
Silicon epitaxial planar
0.8±0 .05
ROHM : TUMD2
0.6±0 .2
    0.1
dot (year week factory) + day
AEC-Q101 Qualified
Land size figure (Unit : mm)
1.1
TUMD2
Structure
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
      0.05
0.25±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2
     0
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current
VRM
VR
Io
Forward current surge peak 60Hz1cyc
Forward current surge peakt=100μs1cyc
Junction temperature
IFSM
IFSM
Tj
Storage temperature
Tstg
Limits
40
40
1
5
10
150
-40 to +150
Unit
V
V
A
A
A
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
Forward voltage
Reverse current
VF - 0.50
IR - 1.5
Max.
0.55
50
Unit Conditions
V IF=700mA
μA VR=40V
0.9±0.08
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.06 - Rev.D

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