|
|
Numéro de référence | RB056L-40TF | ||
Description | Schottky Barrier Diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Schottky Barrier Diode
RB056L-40TF
Applications
General rectification
Dimensions(Unit : mm)
Features
1)Small power mold type.(PMDS)
2)Low IR
3)High reliability
Construction
Silicon epitaxial planer
AEC-Q101 Qualified
Land size figure(Unit : mm)
2.0
PMDS
Structure
Taping specifications(Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
Forward current surge peak (60Hz / 1cyc)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
(*1)Mounting on epoxi board. (Tc=63CMAX.)
Limits
40
40
3
70
150
-40to+150
Electrical characteristics(Ta=25℃)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF1 - - 0.67
VF2 - - 0.58
IR - - 50
Unit
V
V
A
A
C
C
Unit Conditions
V IF=3.0A
V IF=2.0A
A VR=40V
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.08 - Rev.B
|
|||
Pages | Pages 3 | ||
Télécharger | [ RB056L-40TF ] |
No | Description détaillée | Fabricant |
RB056L-40TF | Schottky Barrier Diode | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |