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RB056L-40TF fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB056L-40TF
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB056L-40TF fiche technique
Schottky Barrier Diode
RB056L-40TF
Applications
General rectification
Dimensions(Unit : mm)
Features
1)Small power mold type.(PMDS)
2)Low IR
3)High reliability
Construction
Silicon epitaxial planer
AEC-Q101 Qualified
Land size figure(Unit : mm)
2.0
PMDS
Structure
Taping specifications(Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
Forward current surge peak (60Hz / 1cyc)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
(*1)Mounting on epoxi board. (Tc=63CMAX.)
Limits
40
40
3
70
150
-40to+150
Electrical characteristics(Ta=25)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF1 - - 0.67
VF2 - - 0.58
IR - - 50
Unit
V
V
A
A
C
C
Unit Conditions
V IF=3.0A
V IF=2.0A
A VR=40V
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.08 - Rev.B

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