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Central Semiconductor - SURFACE MOUNT SILICON SCHOTTKY DIODES

Numéro de référence CFSH2-3L
Description SURFACE MOUNT SILICON SCHOTTKY DIODES
Fabricant Central Semiconductor 
Logo Central Semiconductor 





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CFSH2-3L fiche technique
CFSH2-3L
SURFACE MOUNT
SILICON SCHOTTKY DIODE
SOD-882L CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CFSH2-3L is a
high quality Schottky Diode designed for applications
where ultra small size and operational efficiency are
prime requirements. Packaged in a Tiny Leadless
Package™ (TLP™), this component provides
performance characteristics suitable for the most
demanding size constrained applications.
MARKING CODE: T
APPLICATIONS:
DC - DC Converters
Voltage Clamping
Protection Circuits
Battery powered devices including
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
FEATURES:
VR=30V
IO=200mA
Very Low Forward Voltage Drop (VF=0.42V TYP @ 200mA)
Reverse Current (4.0µA TYP @ 10V)
Small TLP™, 1mm x 0.6mm x 0.4mm, ultra low profile,
Leadless Surface Mount package.
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Surge Current, tp=8.3ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IO
IFSM
PD
TJ, Tstg
ΘJA
30
200
3.0
100
-65 to +150
1,250
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
IR
IR
BVR
VF
VF
VF
VF
VF
CT
VR=10V
VR=30V
IR=500µA
IF=0.1mA
IF=1.0mA
IF=10mA
IF=100mA
IF=200mA
VR= 4.0V, f=1.0MHz
4.0
10
30
0.115
0.175
0.24
0.35
0.42
11
MAX
10
50
0.19
0.25
0.30
0.40
0.48
25
UNITS
V
mA
A
mW
°C
°C/W
UNITS
µA
µA
V
V
V
V
V
V
pF
R5 (26-April 2011)

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