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Central Semiconductor - SURFACE MOUNT SILICON SCHOTTKY DIODES

Numéro de référence CFSH-4
Description SURFACE MOUNT SILICON SCHOTTKY DIODES
Fabricant Central Semiconductor 
Logo Central Semiconductor 





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CFSH-4 fiche technique
CFSH-4
SURFACE MOUNT
SILICON SCHOTTKY DIODE
SOD-882L CASE
APPLICATIONS:
DC - DC Converters
Voltage Clamping
• Protection Circuits
• Battery powered applications including
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Surge Current, tp=8.3ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CFSH-4 is a
high quality Schottky Diode designed for applications
where ultra small size and power dissipation are prime
requirements. Packaged in a Tiny Leadless Package™,
TLP™, this component provides performance
characteristics suitable for the most demanding size
constrained applications.
MARKING CODE: L
FEATURES:
Device is Halogen Free by design
Current (IO=200mA)
Low Forward Voltage Drop (VF=0.35V TYP @ 1.0mA)
Low Reverse Current (25nA TYP @ 30V)
Extremely Fast Switching (5ns Max)
Small TLP, 1mm x 0.6mm x 0.4mm, SOD-882L,
ultra low profile, Leadless Surface Mount package.
SYMBOL
VRRM
IO
IFSM
PD
TJ, Tstg
ΘJA
40
200
600
100
-65 to +125
1000
UNITS
V
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
IR
BVR
VF
VF
VF
CT
trr
VR=30V
IR=10μA
IF=1.0mA
IF=15mA
IF=40mA
VR= 0, f=1.0MHz
IF=IR=10mA, Irr=1.0mA, RL=100Ω
40
25
0.35
0.55
0.77
MAX
200
0.38
0.65
1.00
5.0
5.0
UNITS
nA
V
V
V
V
pF
ns
R4 (26-April 2011)

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