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Numéro de référence | P2806BD | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
P2806BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 28mΩ @VGS = 10V
ID
30A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
30
19
100
Avalanche Current
IAS 30
Avalanche Energy
L = 0.1mH
EAS
43
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
40
UNITS
°C / W
Rev 1.2
1 2015/10/23
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Pages | Pages 8 | ||
Télécharger | [ P2806BD ] |
No | Description détaillée | Fabricant |
P2806BD | N-Channel Enhancement Mode Field Effect Transistor | NIKO-SEM |
P2806BD | N-Channel Enhancement Mode MOSFET | UNIKC |
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