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PDF P2806BD Data sheet ( Hoja de datos )
| Número de pieza | P2806BD | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P2806BD
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 28mΩ
ID
30A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
30
19
100
30
43
50
20
-55 to 150
UNITS
V
A
mJ
W
°C
MAXIMUM
2.5
40
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 4.5V, ID = 12A
VGS = 10V, ID = 20A
LIMITS
UNIT
MIN TYP MAX
60
1 1.5
3
V
±250 nA
1
µA
10
100 A
28 38
mΩ
22.3 28
REV 1.0
Feb-18-2011
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P2806BD.PDF ] | |
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