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PDF ACJT1210 Data sheet ( Hoja de datos )
| Número de pieza | ACJT1210 | |
| Descripción | TRIACs | |
| Fabricantes | JIEJIE | |
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JIEJIE MICROELECTRONICS CO. , Ltd
ACJT12 Series 12A TRIACs
Rev.3.0
DESCRIPTION:
The ACJT12 series of double mesa technology provide high
interference immunity, They can be used as an static ON/OFF
function in electrical control system, and used as a driver of
low power and high inductance or resistive loads, such as
jet pumps of dishwashers, fans of air-conditioner ...
12 3
ACJT12xx-xxA provides insulation voltage rated at 2500V
RMS and ACJT12xx-xxF provides insulation voltage rated at
2000V RMS from all three terminals to external heatsink.
TO-220A
Insulated
1 23
TO-220B
Non-Insulated
MAIN FEATURES
Symbol
IT(RMS)
VDRM /VRRM
IGT
Value
12
1000
≤10 or ≤35 or ≤50
Unit
A
V
mA
123
TO-220F
Insulated
T2(2)
T1(1)
G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Storage junction temperature range
Tstg
Operating junction temperature range
Repetitive peak off-state voltage( Tj=25℃)
Repetitive peak reverse voltage( Tj=25℃)
Non repetitive surge peak Off-state voltage
Tj
VDRM
VRRM
VDSM
Non repetitive peak reverse voltage
TO-220A(Ins)/
RMS on-state TO-220F(Ins) (TC=92℃)
current
TO-220B(Non-Ins)
(TC=103℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I2t value for fusing ( tp=10ms)
VRSM
IT(RMS)
ITSM
I2t
Rate of rise of on-state current (IG=2×IGT)
dIT/dt
TEL：+86-513-83639777
- 1 / 5-
Value
-40-150
-40-125
1000
1000
VDRM +100
VRRM +100
12
Unit
℃
℃
V
V
V
V
A
120
72
50
A
A2s
A/μs
http://www.jjwdz.com
1 page  
ACJT12 Series
FIG.1 Maximum power dissipation versus RMS
on-state current
P(w)
18
15
12
9
6
JieJie Microelectronics CO. , Ltd
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A)
18
α=180°
15
12
TO-220B
(Non-Ins)
9
TO-220A(Ins)/
TO-220F(Ins)
6
3
0 IT(RMS) (A)
0 3 6 9 12 15
FIG.3: Surge peak on-state current versus
number of cycles
ITSM (A)
150
120
t=20ms
One cycle
100
80
60
40
20
0 Number of cycles
1 10 100
1000
FIG.5: Relative variations of gate trigger current
versus junction temperature
IGT(Tj) /IGT(Tj=25℃)
3.0
2.5
3
0 Tc (℃)
0 25 50 75 100
FIG.4: On-state characteristics (maximum
values)
ITM (A)
40
125
30
20
10
Tj=125℃
Tj=25℃
0 VTM (V)
0 0.5 1.0 1.5 2.0 2.5
FIG.6: Relative variations of holding current,
latching curretn versus junction temperature
IH,IL(Tj) /IH,IL(Tj=25℃)
3.0
2.5
2.0 IGT3
1.5 IGT1&IGT2
1.0
2.0 IH
IL
1.5
1.0
0.5 0.5
0.0 Tj (℃)
-40 -20 0 20 40 60 80 100 120 140
0.0
-40 -20 0
Tj (℃)
20 40 60 80 100 120 140
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu
JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without
consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when
an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu
JieJie assumes no responsibility for any infringement of other rights of third parties which may
result from the use of such products and information.
This document is the third version which is made in 12-June-2015. This document supersedes
and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
TEL：+86-513-83639777
- 5 / 5-
http://www.jjwdz.com
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